Integrated production from the singnle crystal ingots

We produce small-diameter silicon wafers (12 inches or less) for semiconductors in an integrated manner ranging from single crystal ingots to wafer processing.
We have established the global supply system mainly for the mass-produced wafers for bipolar integrated circuits, discrete circuits, and MEMS.

Please contact :
Niclas Bamberger
CCMC Europe
email: niclasbamberger@ftwafer.com

Polished Wafer

A Polished Wafer is made from a single-crystal silicon ingot which is thinly sliced and then mirror-finished on one side or both sides to produce high flatness and cleanability.

Anneal Wafer

An Annealed Wafer is made by heating a Polished Wafer to a very high temperature in an argon atmosphere to provide an improved crystal integrity of the device formative layer and a gettering function for application to cutting-edge devices.

COP Free Wafer

A COP Free Wafer can be used in advanced devices in which oxygen precipitates and a collection of pores or COPs (Crystal Originated Particles), which degrade the breakdown voltage of a gate oxide film and increase junction leakage currents, are removed by controlling crystal growth.

Substrate for Epi Wafer

As a substrate for Epi Wafers, this wafer accommodates various types of dopants (boron, phosphorus, arsenic, and antimony) that control the characteristics of the device.

Epi Wafer

An Epi Wafer is made from a single crystal silicon that grows on the surface of a Polished Wafer by a vapor phase epitaxy method, featuring a superior quality as a substrate for discrete semiconductors and MOS-ICs.

These wafers are used in products such as cars, smartphones, PCs, industrial equipment, server/cloud centers, home appliances (air conditioners, wearable terminals), and medical equipment.